@article{memristor:chua,
  title={{Memristor: The missing circuit element}},
  author={Chua, L.},
  journal={IEEE Transactions on Circuit Theory},
  year={1971},
  volume={18},
  number={5},
  pages={507-519}
}

@article{memristor:missing,
  title={{The missing memristor found}},
  author={Strukov, D. B. and Snider, G. S. and Stewart, D. R. and Williams, R. S. },
  journal={Nature},
  year={2008},
  volume={453},
  pages={80-83}
}

@inproceedings{memristor:0t1r,
  author={Yi-Chou Chen and Chen, C.-F. and Chen, C.-T. and Yu, J.-Y. and others},
  booktitle={Proceedings of the International Electron Devices Meeting},
  title={An access-transistor-free ({0T/1R}) non-volatile resistance random access memory ({RRAM}) using a novel threshold switching, self-rectifying chalcogenide device},
  year={2003},
  pages={750-753}
}

@misc{WEB:MASTAR,
   author = {{International Technology Roadmap for Semiconductors}},
   title = {{The Model for Assessment of cmoS Technologies And Roadmaps (MASTAR)}},
   note = {\url{http://www.itrs.net/models.html}}
}

@article{rram:nanoswitch,
  author = {R. Waser and M. Aono},
  journal = {Nature Materials},
  title = {{Nanoionics-based resistive switching memories}},
  year = {2007},
  volume={6},
  number={11},
  pages={833-840}
}

@article{rram:al2o3,
  author={Lin Chen and Yan Xu and Qing-Qing Sun and Han Liu and others},
  journal={IEEE Electron Device Letters},
  title={Highly uniform bipolar resistive switching with {Al}$_2${O}$_3$ buffer layer in robust {NbAlO}-based {RRAM}},
  year={2010},
  volume={31},
  number={4},
  pages={356-358}
}

@inproceedings{ReRAM:Wei:IEDM08,
	author={Wei, Z. and Kanzawa, Y. and Arita, K. and Katoh, Y. and others},
	booktitle={Proceedings of the International Electron Devices Meeting},
	title={Highly reliable {TaO}$_x$ {ReRAM} and direct evidence of redox reaction mechanism},
	year={2008},
	pages={293-296}
}

@inproceedings{ReRAM:Chen:IEDM09, 
	author={Chen, Y. S. and Lee, H. Y. and Chen, P. S. and Gu, P. Y. and others},
	booktitle={Proceedings of the International Electron Devices Meeting},
	title={Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity},
	year={2009},
	pages={105-108}
}

@inproceedings{rram:gd2o3,
  author={Kou-Chen Liu and Wen-Hsien Tzeng and Kow-Ming Chang and Yi-Chun Chan and others},
  booktitle={Proceedings of the International Nanoelectronics Conference},
  title={Transparent resistive random access memory ({T-RRAM}) based on ${Gd}_{2}{O}_{3}$ film and its resistive switching characteristics},
  year={2010},
  pages={898-899}
}

@article{rram:jjyang,
  author = {J. Joshua Yang and Matthew D. Pickett and Xuema Li and Douglas A. A. Ohlberg and others},
  title = {Memristive switching mechanism for metal/oxide/metal nanodevices},
  journal = {Nature Nanotechnology},
  volume = {3},
  number = {7},
  pages = {429-433},
  year = {2008}
}

@article{rram:endurance8, 
  author = {Kim, Kuk-Hwan and Hyun Jo, Sung and Gaba, Siddharth and Lu, Wei}, 
  journal = {Applied Physics Letters},
  title = {Nanoscale resistive memory with intrinsic diode characteristics and long endurance}, 
  year = {2010},
  volume = {96},
  number = {5},
  pages={053106.1-053106.3}
}

@inproceedings{rram:endurance10,
  author={Lin, W.S. and Chen, F.T. and Chen, C. H. Lien and M.-J. Tsai},
  booktitle={Proceedings of the International Electron Devices Meeting},
  title={Evidence and solution of over-{RESET} problem for {HfO}$_x$ based resistive memory with sub-ns switching speed and high endurance},
  year={2010},
  pages={19.7.1-19.7.4}
}

@article{rram:mcam,
  author = {Eshraghian, K. and Cho, K.-R. and Kavehei, O. and Kang, S.-K. and others}, 
  journal = {IEEE Transactions on Very Large Scale Integration (VLSI) Systems},
  title={{Memristor MOS content addressable memory (MCAM): Hybrid architecture for future high performance search engines}},
  year={2010},
  volume={PP},
  number={99},
  pages={1-11}
}

@inproceedings{reram:mlc,
  author = {Chien, W.C. and Chen, Y.C. and Chang, K.P. and Lai, E.K. and others}, 
  booktitle = {Proceedings of the International Memory Workshop},
  title = {Multi-level operation of fully {CMOS} compatible {WO}$_x$ resistive random access memory ({RRAM})},
  year={2009},
  pages={228-229}
}

@article{reram:3d,
  author = {Jo, Sung Hyun and Kim, Kuk-Hwan and Lu, Wei},
  title = {{High-density crossbar arrays based on a Si memristive system}},
  journal = {Nano Letters},
  year = {2009},
  volume = {9},
  pages = {870--874}
}

@inproceedings{ReRAM:1D1R,
   author = {Lee, Myoung-Jae and Park, Youngsoo and Kang, Bo-Soo and Seung-Eon Ahn and others},
   title = {2-stack {1D-1R} Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance {RAM} Applications},
   booktitle = {Proceedings of the IEEE International Electron Devices Meeting},
   pages = {771-774},
   year = {2007}
}

@article{RRAM:TED:xpoint,
   author = {Liang, J. and Wong, H. S. P.},
   title = {Cross-Point Memory Array Without Cell Selectors: Device Characteristics and Data Storage Pattern Dependencies},
   journal = {IEEE Transactions on Electron Devices},
   volume = {57},
   number = {10},
   pages = {2531-2538},
   year = {2010}
}

@inproceedings{RRAM:ISSCC11:ITRI,
   author = {Sheu, Shyh-Shyuan and Chang, Meng-Fan and Lin, Ku-Feng and Wu, Che-Wei and others},
   title = {A {4Mb} embedded {SLC} resistive-{RAM} macro with 7.2ns read-write random-access time and 160ns {MLC}-access capability},
   booktitle = {Proceedings of the IEEE International Solid-State Circuits Conference},
   pages = {200-201},
   year = {2011}
}

@inproceedings{RRAM:DATE11:Xu,
  author = {Cong Xu and Xiangyu Dong and Norman P. Jouppi and Yuan Xie},
  title = {Design implications of memristor-based {RRAM} cross-point structures},
  booktitle = {Proceedings of Design, Automation \& Test in Europe},
  year = {2011},
  pages = {1-6}
}

